G. González-Cordero, J. B. Roldán and F. Jimenez-Molinos and, “A time dependent thermal model for RRAM circuit simulation” In 20th Conference on “Insulating Films on Semiconductors” (INFOS), 2017 in Potsdam, Germany
Abstract
A model to account for the dynamic thermal behavior of RRAMs for circuit simulation is presented. The time dependent heat equation in a cylindrical CF has been solved and the obtained model was implemented in a circuit simulator. The role of the thermal capacitance has been studied in depth comparing simulations including fixed and variable thermal capacitances for different voltage pulses. It is shown that thermal transients should be taken into account including variable thermal capacitances for a correct circuit description
References
[1] M. Bocquet et al., Electron Devices, IEEE Trans. on Elec. Dev, 61 (2014) 674- 681.
[2] G. Gonzalez-Cordero, et al., Semicond. Sci. Technol., 31 (2016) 115013.
[3] P.Y. Chen et al., IEEE Trans. Elec. Dev., 62 (2015) 4022-4028.
[4] G. González-Cordero, F. Jiménez-Molinos, J. B. Roldan, M. B. González and F. Campabadal, J. Vac. Sci. Technol. B, 35 (2017) 01A110.
[5] G. González-Cordero et al., in Conference on Design of Circuits and Integrated Systems (DCIS) (2016).
[6] D. Ielmini, Semicond. Sci. Technol., 31 (2016) 063002.
[7] M.A. Villena et al, J. Appl. Phys., 115 (2014) 214504.
[8] Z. Jiang et al, in Simulation of Semic. Processes and Dev. (SISPAD), Internat. Conf., 41 (2014) 9-11.
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