A new method to analyze Random Telegraph signals in the high-resistance state of Ni/HfO2/Si-n+ RRAMs

G. González-Cordero, J. Martín-Martínez, M.B. González, F. Jiménez-Molinos, F. Campabadal, N. Nafría, J.B. Roldán, “A new method to analyze Random Telegraph signals in the high-resistance state of Ni/HfO2/Si-n+ RRAMs” In 20th Workshop on Dielectrics in Microelectronics (Wodim), 2018 in Berlin, Germany.

Abstract

A new technique to analyze random telegraph noise (RTN) is proposed. It has been used for the analysis of current versus time measurements performed on Ni/HfO2/Si-n+-based resistive random
access memories. The method allows us to study current-time traces with a massive number of data without losing the capability of dealing with background noise and discriminating the active defects
responsible for current fluctuations. A comparison of this algorithm with the previous ones is given in terms of computing time and RTN description accuracy. The computing efficiency and the validity
of the model have been proved, and therefore, it is feasible to propose applications for real time analysis making use of this new algorithm

References

[1]   F. Pan et al., Mat. Science and Eng., 83, pp. 1-59, 2014

[2]   D. Veksler et al., IEDM, pp. 9.6.1–9.6.4, 2012

[3]   M. B. González et al., Microel. Eng., 147, p. 59, 2015

[4]   M. B. González et al., IEEE TED, 63, p. 3116, 2016

[5] M. B. González et al., IEEE Trans. Device Mater. Reliab., vol. 14, no. 2, pp. 769–771, 2014

[6] J. Martín-Martínez et al., in Proc. 5th Eur. Workshop CMOS Variability (VARI), pp. 1–6, 2014.

[7] J. Martin-Martinez et al.  IEEE EDL, 35, p. 479, 2014

[8] C. Márquez et al., SSE, 117, pp. 60–65, 201

[9] T. Nagumo et al., IEDM, pp.1-4, 2009

 

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