Papers

[1] G. Gonzalez-Cordero, J. B. Roldan, F. Jimenez-Molinos, J. Suñé, S. Long and M. Liu, “A new compact model for bipolar RRAMs based on truncated cone conductive filaments, a Verilog-A approach,” Semicond. Sci. Technol., vol. 31, no. 11, pp. 1–13, 2016. DOI: 10.1088/0268-1242/31/11/115013

[2] G. González-Cordero, F. Jiménez-Molinos, J. B. Roldan, M. B. González and F. Campabadal “In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures,” J. Vac. Sci. Technol. B 35, 01A110 (2017); DOI: 10.1116/1.4973372

[3] G. González-Cordero, M. B. González, H. García, F. Campabadal, S. Dueñas, H. Castán, F. Jiménez-Molinos and J. B. Roldan, “A physically based model for resistive memories including a detailed temperature and variability description”, Microelectronic Engineering, Volume 178, 25 June 2017, Pages 26-29, ISSN 0167-9317, DOI: 10.1016/j.mee.2017.04.019

[4] J. B. Roldan, E. Miranda, G. Gonzalez-Cordero, P. García- Fernández, R. Romero-Zaliz, P. González-Rodelas, A. M. Aguilera, M.B. González, F. Jiménez-Molinos. “Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model” Journal of Applied Physics, 2018, 123, 014501. DOI: 10.1063/1.5006995

[5] G. Gonzalez-Cordero, Mireia B. González, F. Jiménez-Molinos, Francesca Campabadal, and J. B. Roldan. “New method to analyze random telegraph signals in resistive random access memories” Journal of Vacuum Science and Technology B. 37, 012203 (2019). DOI: 10.1116/1.50593840

[6] G. Gonzalez-Cordero, M. Pedro, J. Martin-Martinez, M.B. González, F. Jiménez-Molinos, F. Campabadal, N. Nafría, J. B. Roldan. “A physical model to describe electronic synapses based on resistive switching devices” Solid State Electronics, Volume 157, July 2019, Pages 25-33. DOI: 10.1016/j.sse.2019.04.001

[7] G. Gonzalez-Cordero, M.B. González, F. Campabadal, F. Jiménez-Molinos, J. B. Roldan. “A new technique to analyze RTN signals in resistive memories” Microelectronic Engineering, Volume 215, 15 July 2019, 110994 DOI: 10.1016/j.mee.2019.110994

[8]  G. Gonzalez-Cordero, M.B. González, A. Morell, F. Jiménez-Molinos, F. Campabadal, J. B. Roldan, “Neural network based analysis of Random Telegraph Noise in Resistive Random Access Memories,” Semiconductor Science and Technology, (Accepted for publication on December 11, 2019). DOI: 10.1088/1361-6641/ab6103

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