A Physically Based Model to describe Resistive Switching in different RRAM technologies
G. González-Cordero, M. B. González, H. García, F. Jimenez-Molinos, F. Campabadal, S. Dueñas, H. Castán and J. B. Roldán, “A Physically Based Model
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MonthJanuary 2017
SPICE simulation of RRAM circuits. A compact modeling perspective
G. González-Cordero, J. B. Roldán, F. Jimenez-Molinos, “SPICE simulation of RRAM circuits. A compact modeling perspective”, in 11th edition of the Spanish Conference
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Simulation of RRAM memory circuits, a Verilog-A compact modeling approach
G. González-Cordero, J. B. Roldán, and F. Jimenez-Molinos, “Simulation of RRAM memory circuits, a Verilog-A compact modeling approach,” in XXXI edition of the
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Transient SPICE simulation of Ni/HfO2/Si-n+ resistive memories
G. González-Cordero, F. Jimenez-Molinos, J. B. Roldán, M. B. González and F. Campabadal, “Transient SPICE simulation of Ni/HfO2/Si-n+ resistive memories,” in XXXI edition
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SPICE simulation of thermal reset transitions in Ni/HfO2/Si-n+ RRAMs including quantum effects
G. González-Cordero, F. Jimenez-Molinos, M. A. Villena and J. B. Roldán, “SPICE simulation of thermal reset transitions in Ni/HfO2/Si-n+ RRAMs including quantum effects,”
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An in-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures
G. González-Cordero, M. B. González, F. Jimenez-Molinos, F. Campabadal, and J. B. Roldán, “An in-depth study of the physics behind resistive switching in
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