Congresses | RRAM Modeling

[1] G. González-Cordero, J. B. Roldán and F. Jimenez-Molinos, “A model for circuit simulation of bipolar RRAMs based on conductive filaments with truncated cone shapes,” en Jornadas de Investigadores en Formación Fomentando la interdisciplinariedad (JIFFI), 2016 in Granada, Spain.

[2] G. González-Cordero, M. B. González, F. Jimenez-Molinos, F. Campabadal, and J. B. Roldán, “An in-depth study of the physics behind resistive switching in TiN/Ti/HfO₂/W structures,” in 19^th Workshop on Dielectrics in Microelectronics (Wodim), 2016 in Catania, Italy.

[3] G. González-Cordero, F. Jimenez-Molinos, M. A. Villena and J. B. Roldán, “SPICE simulation of thermal reset transitions in Ni/HfO₂/Si-n+ RRAMs including quantum effects,” in 19^th Workshop on Dielectrics in Microelectronics (Wodim), 2016 in Catania, Italy.

[4] G. González-Cordero, F. Jimenez-Molinos, J. B. Roldán, M. B. González and F. Campabadal, “Transient SPICE simulation of Ni/HfO₂/Si-n+ resistive memories,” in XXXI edition of the Design of Circuits and Integrated Systems Conference (DCIS), 2016 in Granada, Spain. DOI: 10.1109/DCIS.2016.7845384

[5] G. González-Cordero, J. B. Roldán, and F. Jimenez-Molinos, “Simulation of RRAM memory circuits, a Verilog-A compact modeling approach,” in XXXI edition of the Design of Circuits and Integrated Systems Conference (DCIS), 2016 in Granada, Spain. DOI: 10.1109/DCIS.2016.7845386

[6] G. González-Cordero, J. B. Roldán, F. Jimenez-Molinos, “SPICE simulation of RRAM circuits. A compact modeling perspective”, in 11^th edition of the Spanish Conference on Electron Devices (CDE), 2017 in Barcelona, Spain. DOI: 10.1109/CDE.2017.7905250

[7] G. González-Cordero, M. B. González, H. García, F. Jimenez-Molinos, F. Campabadal, S. Dueñas, H. Castán and J. B. Roldán, “A Physically Based Model to describe Resistive Switching in different RRAM technologies”, in 11^th edition of the Spanish Conference on Electron Devices (CDE), 2017 in Barcelona, Spain. DOI: 10.1109/CDE.2017.7905223

[8] F. Jimenez-Molinos, G. González-Cordero, P. Cartujo and J. B. Roldán, “SPICE modelling of thermal reset transitions for circuit simulation”, in 11^th edition of the Spanish Conference on Electron Devices (CDE), 2017 in Barcelona, Spain. DOI: 10.1109/CDE.2017.7905227

[9] G. González-Cordero,M. B. González, H. García, F. Campabadal, S. Dueñas, H. Castán, F. Jimenez-Molinos and J. B. Roldán, “A physically based model for resistive memories including a detailed temperature and variability description” In 20^th Conference on “Insulating Films on Semiconductors” (INFOS), 2017 in Potsdam, Germany

[10] G. González-Cordero, J. B. Roldán and F. Jimenez-Molinos and, “A time dependent thermal model for RRAM circuit simulation” In 20^th Conference on “Insulating Films on Semiconductors” (INFOS), 2017 in Potsdam, Germany

[11] G. González-Cordero, J. Martín-Martínez, M.B. González, F. Jimenez-Molinos, F. Campabadal, N. Nafría, J. B. Roldán, “A new method to analyze Random Telegraph signals in the high-resistance state of Ni/HfO₂/Si-n+ RRAMs” In 20^th Workshop on Dielectrics in Microelectronics (Wodim), 2018 in Berlin, Germany.

[12] G. González-Cordero, M.B. González, F. Campabadal, F. Jimenez-Molinos, J. B. Roldán, “A new technique to analyze RTN signals in resistive memories” In 21^th Workshop on Dielectrics in Microelectronics (INFOS), 2019 in Cambridge University, Cambridge, UK.

Invited Speaker

[1] Samuel Aldana, G. González-Cordero, F. Jimenez-Molinos, J. B. Roldán, “Simulation and physical compact modeling of resistive switching devices” In 7 th Workshop and MC Meeting on Memristors – Devices, Models, Circuits, Systems and Applications, in Dubrovnik, Croatia, during march 12-13, 2018. Presented by: F. Jiménez-Molinos.