G. González-Cordero, M. B. González, H. García, F. Jimenez-Molinos, F. Campabadal, S. Dueñas, H. Castán and J. B. Roldán, “A Physically Based Model to describe Resistive Switching in different RRAM technologies”, in 11^th edition of the Spanish Conference on Electron Devices (CDE), 2017 in Barcelona, Spain.

Abstract

A model for filamentary conduction in RRAMs based on Metal-Insulator-Metal (MIM) structures has been developed. The model describes RRAM resistive switching processes by calculating the formation and rupture of conductive filaments (CFs) in the dielectric. The resistance of the electrodes, of the CF and the hopping current in the gap, g, between the CF tip and the electrode is taken into consideration. The thermal description of the CF is included by solving the heat equation. The model has been employed to reproduce I-V curves of different RRAM technologies. The model is accurate if the correct model parameters are used in each case. Therefore, it is suitable to be implemented in circuit simulator to analyze circuits based on RRAMs under different operation regimes.

References

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